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| JMnic Product Specification Silicon NPN Power Transistors 2SC5287 DESCRIPTION With TO-3PN package High voltage,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE 900 550 7 5 10 2.5 80 150 -55~150 ae ae UNIT V V V A A A W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC5287 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 550 V VCEsat Collector-emitter saturation voltage IC=1.8A; IB=0.36A 0.5 V VBEsat Base-emitter saturation voltage IC=1.8A; IB=0.36A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 |I A IEBO Emitter cut-off current VEB=7V; IC=0 100 |I A hFE DC current gain IC=1.8A ; VCE=4V 10 25 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF fT Transition frequency IE=-0.35A ; VCE=12V 6 MHz Switching times ton Turn-on time IC=1.8A; RL=139| IB1=0.27A; IB2=-0.9A VCC=250V 0.7 |I s ts Storage time 4.0 |I s tf Fall time 0.5 |I s 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5287 Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC5287 4 |
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